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Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3

Name:	Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3
Technology / Methodology:	Nanolitography infrastructure
Location:	CEITEC Vysoké učení technické v Brně
Instrument description:	Resist mask preparation for fabrication of nano and microstructures with ultimate dimensions below 50 nm. Includes resist spin coating facility, complete photolithography setup and electron beam lithography / shared by CEITEC users, open facilities
Research group:	CF: CEITEC Nano

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