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Low pressure chemical vapor deposition - Nitrides

Name:	Low pressure chemical vapor deposition - Nitrides
Technology / Methodology:	Etching & Deposition
Location:	CEITEC Vysoké učení technické v Brně
Instrument description:	This position within the LPCVD system is dedicated to growth of silicon nitrides of different stechiometry on Si wafers, using dichlorosilane (SiCl2H2) and ammonia (NH3) as precursors in LPCVD process.
Research group:	CF: CEITEC Nano

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